mmbt2369 / pn2369 ? npn switching transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com mmbt2369 / pn2369 rev. 1.0.0 1 february 2008 mmbt2369 / pn2369 npn switching transistor ? this device is designed for high speed saturated switching at collector currents of 10ma to 100ma. ? sourced from process 21. absolute maximum ratings * t a = 25c unless otherwise noted * this ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** pulse test: pulse width 300 m s, duty cycle 2.0% notes: 1) these rating are based on a maximum junction temperature of 150 degrees c. 2) these are steady limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics t a = 25c unless otherwise noted * device mounted on fr-4pcb 1.6? 1.6? 0.06?. symbol parameter ratings units v ceo collector-emitter voltage 15 v v cbo collector-base voltage 40 v v ebo emitter-base voltage 4.5 v i c collector current - continuous 200 ma i cp **collector current (pulse) 400 ma t j , t stg operating and storage junction temperature range -55 ~ 150 c symbol parameter max. units p d total device dissipation derate above 25 c 350 2.8 mw mw/ c r jc thermal resistance, junction to case 125 c/w r ja thermal resistance, junction to ambient 357 c/w sot-23 b e c mark: 1j to-92 1. emitter 2. base 3. collector 1 mmbt2369 pn2369
mmbt2369 / pn2369 ? npn switching transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com mmbt2369 / pn2369 rev. 1.0.0 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width 300 m s, duty cycle 2.0% symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = 10ma, i b = 0 15 v v (br)ces collector-emitter breakdown voltage i c = 10 a, v be = 0 40 v v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 4.5 v i cbo collector cutoff current v cb = 20v, i e = 0 v cb = 20v, i e = 0, t a = 125 c 0.4 30 a a on characteristics h fe dc current gain * i c = 10ma, v ce = 1.0v i c = 100ma, v ce = 2.0v 40 20 120 v ce(sat) collector-emitter saturation voltage * i c = 10ma, i b = 1.0ma 0.25 v v be(sat) base-emitter saturation voltage i c = 10ma, i b = 1.0ma 0.7 0.85 v small signal characteristics c obo output capacitance v cb = 5.0v, i e = 0, f = 1.0mhz 4.0 pf c ibo input capacitance v eb = 0.5v, i c = 0, f = 1.0mhz 5.0 pf h fe small -signal current gain i c = 10ma, v ce = 10v, r g = 2.0k , f = 100mhz 5.0 switching characteristics t s storage time i b1 = i b2 = i c = 10ma 13 ns t on turn-on time v cc = 3.0v, i c = 10ma, i b1 = 3.0ma 12 ns t off turn-off time v cc = 3.0v, i c = 10ma, i b1 = 3.0ma, i b2 = 1.5ma 18 ns
mmbt2369 / pn2369 ? npn switching transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com mmbt2369 / pn2369 rev. 1.0.0 3 package dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
mmbt2369 / pn2369 ? npn switching transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com mmbt2369 / pn2369 rev. 1.0.0 4 package dimensi ons (continued) dimensions in millimeters 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92
mmbt2369 / pn2369 npn switching transistor mmbt2369 / pn2369 ? 2007 fairchild semiconductor corporation www.fairchildsemi.com mmbt2369 / pn2369 rev. 1.0.0 5 rev. i31 trademarks the following are registered and unregister ed trademarks and service marks fairchild se miconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make cha nges without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any prod uct or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as cr itical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failur e to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a produc t that has been discontin- ued by fairchild semiconductor. the data sheet is printed for reference infor- mation only.
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